| PART |
Description |
Maker |
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1423AV18-250BZC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Analog Integrations, Corp.
|
| CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| CY7C1318CV18-200BZXC |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1992BV18-167BZXC CY7C1992BV18-300BZC CY7C1992B |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.5 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1277V18-300BZC CY7C1266V18-300BZXC CY7C1266V18 |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1318BV18-300BZI CY7C1318BV18-167BZI CY7C1916BV |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1318BV18-167BZC CY7C1318BV18-167BZI CY7C1318BV |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1917KV18 CY7C1321KV18-250BZC CY7C1321KV18-250B |
18-Mbit DDR II SRAM Four-Word Burst Architecture
|
Cypress Semiconductor
|
